Cambridge GaN Devices (CGD) today announced that Inventchip, a leading provider of SiC power devices and IC solutions headquartered in Shanghai, has successfully demo’d a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD’s ICeGaN® gallium nitride ICs.

Ragini Jain was presented with her award at a ceremony last night, a special evening that brought together industry leaders, emerging talents, and advocates for diversity in electronics, hosted by TV’s Maggie Philbin and Electronics Weekly’s Editor in Chief, Caroline Hayes.

CGD shows breakthrough Combo ICeGaN 100kW+ technology for EV Inverters for the first time in Europe. Visit us at Hall 7-657.

CGD revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN® gallium nitride (GaN) technology.

Cambridge GaN Devices (CGD) will demonstrate at APEC that the company’s ICeGaN® GaN ICs can now satisfy a broad range of applications with higher power requirements, such as servers, data centres, inverters, industrial power supplies and, very soon, automotive EVs > 100 kW.

CGD has successfully closed the Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.

Cambridge GaN Devices (CGD) has announced that Henryk Dabrowski, appointed as SVP of Global Sales at the innovative GaN IC company last year, will lead CGD’s global sales strategy, building on the successes to date, by expanding into additional markets exploiting the significant advantages that ICeGaN® offers.

CTO Prof. Florin Udrea revealed a groundbreaking innovation named "Combo ICeGaN®" for the first time at the International Electron Devices Meeting in San Francisco, addressing a key challenge faced by EV traction inverters: poor light-load efficiency.

CGD have joined forces with IFP Energies nouvelles (IFPEN) to developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 VDC inverter. The demo is exhibiting at Hall C3.539 in the world-leading electronics conference Electronica.

CGD and Qorvo®, (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, have partnered to bring together industry-leading motor control and power efficiency technologies in the PAC5556A + ICeGaN® evaluation kit (EVK).

CGD will exhibit at Electronica which runs from November 12-15, 2024 at the Messe München, Munich, Germany. Booth C3. 539.

Visit us at booth 319 in Phoenix Convention Center in Arizona, USA.

Cambridge GaN Devices is taking part in two international events aimed at increasing the resilience of the semiconductor value chain and promoting information exchange and closer coordination between governments on semiconductors.

Cambridge GaN Devices (CGD) has launched new ICeGaN™ P2 series ICs featuring RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency for high-power applications such as data centres, inverters, motor drives and more.

Cambridge GaN Devices (CGD) is partnering with Qorvo®, (Nasdaq: QRVO), a leading global provider of connectivity and power solutions, to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications.

Cambridge GaN Devices (CGD) has announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection.

Cambridge GaN Devices (CGD) has signed a Memorandum of Understanding with Industrial Technology Research Institute (ITRI) of Taiwan to solidify a partnership in developing high performance GaN solutions for USB-PD adaptors.

CGD will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.

At the APEC 2024, IEEE Applied Power Electronics Conference and Exposition, Cambridge GaN Devices is introducing new reference designs and showing demos which address the broad and diverse industrial market.

CGD will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates.

‘Knowledge’ is a huge and broad subject, so it is important to define what we really mean if the term is to have value.

Cambridge GaN Devices (CGD) has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.

Establishing a clear purpose and maintaining alignment during a scale-up phase lays the groundwork for a stable and prosperous business in the long run.

ICeGaN™ GaN HEMT System-on-Chip (SoC) was awarded “Best Demo” at the Innovation Zone of TSMC’s 2023 Europe Technology Symposium.

CGD will speak about the outstanding advantages of GaN in improving data centers efficiency at the Electronics Asia Conference 2023.

Cambridge GaN Devices introduces an industry-first: incorporating a unique 2D barcode on a GaN IC, which is of significance in providing vital data concerning process ruggedness and reliability.

Cambridge GaN Devices (CGD) has signed a distribution agreement with Singapore-based Supreme Components International Pte Ltd (SCI), providing support for customers across the Asia-Pacific region.

Cambridge GaN Devices (CGD) will exhibit for the first time at PCIM Asia, the only exhibition in China specialising in power electronics and its applications in the fields of intelligent motion, renewable energy and energy management.

Cambridge GaN Devices (CGD) has announced the signing of a distribution deal with high-service leader, DigiKey. Under the terms of the global agreement, DigiKey will hold substantial stocks of CGD’s easy-to-use, rugged and highly-efficient ICeGaN™ HEMTs and related products.

Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN™ HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB.

Cambridge GaN Devices (CGD) announces that co-founder and CTO, Professor Florin Udrea was recently inducted into the prestigious ISPSD (International Symposium on Power Semiconductor Devices) Hall of Fame.

Sustainability is never a standalone task of certain company, but an extended responsibility of outsourced partners of this company.

CEO Giorgia Longobardi is invited to attend the exclusive event GSA Global Leadership Summit in Tokyo, and gives a speech on possible influence of diversity, equity and inclusion on semiconductor industry.

The adoption of GaN has been constrained by concerns over drive complexity, sensitivity to over-voltage and false-switching. This webinar will discuss how ICeGaN can deliver ease-of-use and improve performance on the application side.

CGD releases the second series of ICeGaN ICs at PCIM Europe 2023.

CTO Prof. Florin Udrea believes that innovation is from a deep knowledge base.

Third episode in series aired 4pm-5pm BST, Thursday, 27th April.

70 V over-voltage capability combines with intelligent on-chip protection to deliver highest GaN reliability and ruggedness

A personal view on leadership by Giorgia Longobardi, CEO, Cambridge GaN Devices

Following the first webinar, the second in the Tutorial Series will take a deep dive into current architectures of GaN HEMTs, and give prospects of future concepts of GaN.

CGD will attend APEC 2023 in Orlando during March 20-23. Visit Booth 305 for latest reference designs and evaluation boards.

In the first of Tutorial Webinar Series, Andrea Bricconi, CCO, will talk about CGD’s perspective on GaN power transistors and how they are contributing to a more efficient use of energy in power conversion.

French public R&I organization to use CGD’s GaN HEMTs in innovative, next-gen automotive inverter design

CTO Prof. Florin Udrea discusses current bandgap semiconductor technologies and materials for power devices.

Monolithic SMART GaN HEMTs “drive like silicon“; reduce BOM count; deliver class-leading reliability performance

Funding led by Parkwalk Advisors and BGF enables CGD to deliver mass production of its GaN transistor family and contribute to the global sustainability movement.

Cambridge GaN Devices to sign an agreement with Neways to develop high efficiency, photovoltaic solar inverter products based on gallium nitride technology at Electronica 2022.

Cambridge GaN Devices will participate for the first time at Electronica – Europe’s largest Electronics event – when the company will take an active part in the conference proceedings as well as show innovative GaN devices and discuss strategic partnerships.

Clean tech company secures Suite 8 at The Jeffreys Building at St John’s Innovation Park.

CEO Dr. Giorgia Longobardi will discuss why GaN should be the answer for greener energy consumption in the future.

Co-Founder and CEO Dr. Giorgia Longobardi will be discussing 'GaN Power Devices and their Applications' on Industry Applications Society's (IAS's) live webinar on 14th September.

CGD join this prestigious workshop discussing on the latest advancements in the ICeGaN™ technology.

CGD joins PCIM Europe, the world's leading exhibition and conference for power electronics, during 10-12 May in Nuremberg.

Dr. Giorgia Longobardi gives a talk on the environmental impact of novel semiconductor materials.

Co-Founder and CEO Dr. Giorgia Longobardi receives an interview from Enterprising Minds, talking about her stories with CGD and University of Cambridge.

Industry-first ease-of-use eMode 650 V Gallium Nitride (GaN) solutions - powered by the CGD´ patented ICeGaN™ technology - set new efficiency standards and reduce engineers’ design-in efforts.

More than 5 megatons of CO2 emissions can be saved each year over the next decade using Gallium Nitride (GaN)-based IC technology to increase the efficiency of data centre server power supplies.