Using GaN ICs in parallel for powertrain designs can be a significant challenge for developers to keep the devices balanced. The ICeGaN interface inherently balances the operation of multiple devices without the need to select devices with similar performance characteristics or the need to incorporate balancing components and additional design complexity.

With a low on-resistance of only 9mΩ, the new ICeGaN device provides significantly lower losses throughout an electric vehicle’s powertrain lessening the need for thermal management strategies and components. A further benefit is higher frequency switching ability that can enable downsizing and weight reduction of the propulsion system, boosting the range of the vehicle.

The ICeGaN simplifies the interface with the gate driver ICs in the inverter and allows simple parallel operation with the larger die. The auxiliary transistor in the interface filters out parasitic noise from the gate driver loops, giving the device a built-in immunity to noise.

The interface also includes integrated temperature sensing for system control and improved diagnostics that improve the reliability of the EV powertrain.

Dan Murphy, Senior Director, Product Management, CGD
“This technology demonstrates the advantages of GaN and the ICeGaN interface for inverter designs with the lower losses, smaller size and lower costs that automotive developers are asking for.”

CGD has already demonstrated a multi-level GaN 800Vdc inverter that can power electric motors to over 100 kW peak, 75 kW continuous power, benefiting a broad range of high-voltage electrification and motor-drive applications.

Availability and Pricing
CGD recently announced that it is working with GlobalFoundries (GF), a leading semiconductor manufacturer to make these and other devices, which further strengthens CGD’s fabless strategy and expands its supply chain capabilities for ICeGaN and other power devices.

A 9mΩ prototype IC is sampling now to interested parties, and CGD is working with several automotive OEMS and Tier One suppliers on ICeGaN devices for EV powertrain designs.

ENDS

About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise under the leadership of CEO Fabio Necco, a power semiconductor industry veteran, CGD was spun out from Cambridge University. Its founders, CMO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.