CGD Joins Forces With NXP Semiconductors to Accelerate Time to Market
This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s extensive expertise in GaN processes and technologies.
Introduce New 650 V ICeGaN Device for Automotive Applications
Cambridge GaN Devices (CGD), has developed a 650V GaN IC for automotive applications that addresses automakers desire to improve inverter efficiency. With a low on-resistance of only 9mΩ, the new ICeGaN device provides significantly lower losses throughout an electric vehicle’s powertrain lessening the need for thermal management strategies and components.
CGD Joins Forces With NXP Semiconductors to Accelerate Time to Market
This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s extensive expertise in GaN processes and technologies.
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Introducing ICeGaN® Technology
Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN® transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.
As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN® power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.
GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN® integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.
Latest News
CGD Joins Forces With NXP Semiconductors to Accelerate Time to Market
This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s extensive expertise in GaN processes and technologies.
New 650 V ICeGaN Device for Automotive Applications From CGD Helps Increase EV Range
CGD's new 650V ICeGaN® device with low on-resistance improves inverter efficiency for reduced thermal management provision and enables higher frequency switching for system size and weight reduction.
New CEO Appointed at Cambridge GaN Devices
Cambridge GaN Devices announced the appointment of Fabio Necco as Chief Executive Officer. The move is designed to drive forward CGD’s entry into key markets.