CGD Partners With GlobalFoundries to Supply Single Chip, Reliable and Efficient ICeGaN® Power Devices

CGD’s pioneering single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. This means that there is no need for a specialist process in the wafer fab, and leveraging GF’s state of the art 8” process ensures the manufacturing costs of CGD products remain inherently competitive.

ICeGaN IP is design rather than process-based so is fab agnostic meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fast fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterisation data to refine the models, thus enabling the timely delivery of CGD’s newest products with reliable and predictable performance. This capability ensures “right first time” designs that enable ICeGaN power devices to be brought to market in less time, providing CGD with the agility to innovate and respond quickly to the changing application landscape.

SIMON STACEY | CHIEF OPERATING OFFICER, CGD
“Applying the CGD design flow to the excellent GF process design kit (PDK) is essential to enabling CGD to develop and manufacture our next generation GaN power devices at a much faster time to market. We are delighted to be partnering with GF, as their renowned foundry services and commitment to GaN are a perfect fit for our ICeGaN power devices.”

GaN offers unique advantages including higher efficiency, higher power density, compact in size with faster switching speeds. This enables power electronics designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, mean that CGD is positioned to take advantage of rapidly growing markets, which can already be seen in the growing demand for GaN technology.

Uniquely, ICeGaN combines a GaN switch, interface and protection circuitry on the same GaN chip, in contrast to most other solutions that use multi-chip or co-packaged solutions. CGD’s integrated approach means that devices are simple to drive using standard silicon technology and are very rugged. CGD is the only company worldwide with Single-Chip Technology that can run on a standard driver, making next-generation power systems more efficient and truly scalable. This will enable design engineers to have confidence in GaN which offers significant efficiency, size and thermal benefits over traditional silicon devices.

About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, CEO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.

ENDS

CONTACT INFORMATION
Sam Zacherino, Corporate Marketing, CGD | +44 1223 425185 [email protected]
Jeffreys Building, Suite 8, Cowley Road, Cambridge CB4 0DS

Eden Shelley, Account Manager, Napier Partnership | +44-1243-531123 | [email protected]