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Introducing ICeGaN® Technology

Industry-First, Easy to Use e-Mode GaN
Industry-First, Easy to Use e-Mode GaN

Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN® transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.

> 50% Energy Saved
> 50% Energy Saved

As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN® power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.

> 2x Smaller Electronics
> 2x Smaller Electronics

GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN® integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.

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