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CGD65B200S2 is a GaN-on-silicon transistor: 650V / 200 mΩ GaN HEMT with ICeGaN® Gate and Current Sense. Discover CGD's GaN HEMT transistors.

CGD65B200S2 - GaN Transistor | Cambridge GaN Devices

**This part is not recommended for new designs. Visit [CGD65B240SH2](/p/product-CGD65B240SH2) for an alternative. Check the EOL PCN file [here](https://cms.camgandevices.com/uploads/CGD_H1_series_EOL_PCN_44102f744a.pdf).** 
 
The CGD65B200S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications. 

The CGD65B200S2 features CGD’s ICeGaN® gate technology enabling compatibility with virtually all gate drivers and controller chips available. The integrated current sense function eliminates the need for a separate current sense resistor and the associated efficiency losses. Because no external sense resistor is needed, the device can be directly soldered to the large copper area of the ground plane, improving the thermal performance and simplifying the thermal design.

It comes in a DFN 5x6 SMD package to support high frequency operation while ensuring the highest thermal performance.
 
Applications: 
- PSUs, Industrial SMPS and inverters 
- Mobile chargers, fast-chargers
- AC adapters
- Notebook adapters
- Gaming PSUs
- PC power
- LED lighting
- ClassD Audio
- TV and wireless power
- SMPS and converters in single-switch and half-bridge topologies with hard- or soft-switching
- AC/DC and DC/DC converters

Topologies:
- All flyback topologies 
- Totem pole and single-switch PFC
- LLC, PSFB DC/DC converters at high frequency
- ClassD and ClassE

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CGD65B200S2.pdf

CGD65B200S2

Datasheet

PRODUCT BRIEF H1_NEW.pdf

Product Brief for H1 Series_EN

Product Brief

CGD-AN2201-ICeGaN in LLC Application Note.pdf

CGD-AN2201-ICeGaN in LLC Application Note

AN2206-Current Sensing with ICeGaN Application Note 03142024update.pdf

CGD-AN2206-Current Sensing with ICeGaN Application Note

CGD-AN2207-ICeGaN_ HEMT PCB Layout Guide.pdf

CGD-AN2207-ICeGaN HEMT PCB Layout Guide

AN2302-How to use ICeGaN.pdf

CGD-AN2302-How to Use ICeGaN

Application Notes

SPICE Model CGD65B200S2.zip

SPICE Model CGD65B200S2

CGD65B Recommended Footprint.pdf

CGD65B Recommended Footprint

CGD65B Recommended Footprint.zip

CGD65B Altium Library

Design Files

CGD-H1 series EOL PCN.pdf

CGD-H1 series EOL PCN

Quality File

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Management Team

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Dr. Giorgia Longobardi, CEO of CGD, is an experienced engineer with international practice working on GaN power devices design and characterisation. As the inventor of high impact patents in the field of GaN power devices, Giorgia has the unique blend of academic and business know-how as one of her biggest strengths.

During her PhD in power devices at Cambridge University, Giorgia worked on international projects with top semiconductor companies, through which she learned about different cultures operating in this field and gained experience managing and budgeting multi-partner projects. Before that, Giorgia led the GaN power devices team at the Cambridge University engineering department

As a result of her outstanding work, she received the RAEng Engineers Trust Young Engineer of the Year from the Royal Academy of Engineering in 2019, a distinguished award given to engineers in full-time higher education, research, or industrial employment who have demonstrated excellence in their early career stages.

Curious and knowledgeable, Giorgia leads an experienced team of passionate people working with enthusiasm and continuous drive to do things better. She never forgets why she founded CGD: to change how energy is used and protect the environment with efficient power electronics.

Giorgia regularly supports initiatives supporting the environment within and outside her working hours. She is an active and keen promoter of women in engineering and entrepreneurship, for which she has given several talks at high schools and universities around the world.

Founder and Chief Executive Officer (CEO)

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Prof. Florin Udrea, CTO of Cambridge GaN devices (CGD), is recognised as a multi-talented individual in the field of semiconductors. Besides being a professor in semiconductor engineering at the University of Cambridge, he is also the head of the High Voltage Microelectronics and sensors group, founder of other semiconductor companies, passionate about driving strategy forward, a mastermind for innovations, and holds more than 200 international patents in power semiconductor devices and sensors. Florin has been a Fellow of the Royal Academy of Engineering in the UK since 2015.

With his experience and technical know-how, Florin is helping turn CGD into an innovative company. Besides CGD, he has founded other successful semiconductor companies: Cambridge Semiconductor (Camsemi) in power ICs, sold to Power Integrations; Cambridge CMOS Sensors (CCS) in the field of smart sensors, sold to AMS; Cambridge Microelectronics in Power Devices; and Flusso Ltd. in flow and temperature sensors.

In 2018, Florin was awarded the Pro-Vice-Chancellor Award from Cambridge University, the Nanosmat Medal, and the prestigious Mullard Award from The Royal Society.

Florin never lets an opportunity pass by and will diligently pursue any new ideas. Although he knows and teaches theory, a moment of pride for him is when things come to life. With CGD and its products, he is painting the future in a brighter colour, and this is what Florin is leading by working with semiconductors.	

Founder and Chief Technology Officer (CTO)

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Owen has extensive experience working in senior finance positions within the semiconductor industry. Before joining CGD, Owen worked at Arm in various roles, including leading the financial reporting team, financial planning, business partnering, and M&A.

He started his career at KPMG in the Audit capacity, working across the middle market sector, including SME technology clients. He then joined the KPMG Operations Strategy Group where he worked on several rapid value diagnostic projects.

Owen is an ICAEW Fellow (FCA) and holds an MA (Cantab) in Geography from the University of Cambridge.

Chief Financial Officer (CFO)

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Allan has a master’s degree in Electrical Engineering from Aalborg University focusing on system and algorithm development and realization.

Allan has spent more than 22 years in the semiconductor industry working in leading edge of mobile communications at Nokia, Renesas and Broadcom, security technology at NXP, depth sensing technology at ams AG, as technical leader, program manager, team leader and group leader. He has built and led 100+ person global multi-site, multi-cultural organizations over a decade. With his teams, he has delivered multiple highly complex technical products with lifetime volumes in the billions of units to customers.

With his extensive engineering leadership background and technology understanding combined with customer orientation and passion for product development, Allan joins CGD in the role of VP of Research and Development.

SVP Research and Development

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Henryk Dabrowski has over 30 years experience in technology design, commerce and sales leadership. Having held senior roles as Vice President of Sales, Henryk has been responsible for working with customers to introduce the most robust, effective and innovative technological solutions.

Prior to joining CGD in 2024, Henryk led the sales and applications teams for Vicor across EMEA, building an organisation reflecting the local business requirements needed to drive growth in the adoption of power efficient designs. He has held commercial roles at semiconductor businesses Texas Instruments and Infineon, and business development roles at European components distributor Rutronik. 

Henryk is a Chartered Engineer (CEng) with the Institute of Engineering and Technology (IET) and the Engineering Council UK.

SVP Global Sales

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Simon has nearly 30 years’ experience in the semiconductor industry having worked in a variety of engineering and senior leadership roles spanning R&D, Quality, Manufacturing, Test and Operations. His roles have ranged from leading and developing the talent of <10 people in highly skilled, highly focused, start up teams to >100 people in multi-region, multi-cultural, cross-functional teams.

Throughout his career he has gained a breadth of fabless and IDM experience from working with AI processors at Graphcore, environmental sensors at ams and CCS, mixed signal RF at CSR, III-V photonics at Agilent Technologies and DRAM memories at Fujitsu. 

Applying his knowledge and commitment to disruptive thinking, Simon has successfully filed >20 patent applications, covering every technology in which he has worked.

Simon brings a wealth of experience in driving innovative solutions, operational excellence and sustainable growth which will be leveraged in his role as COO at CGD.

Chief Operating Officer (COO)

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Carryll has a master’s degree in Marketing and has more than 25 years of experience in the SMPS and Semiconductors industry. In the first 4+ years of her career, she worked as a buyer for the SMPS market and managed the supply chain for Semiconductor and key passive components.

Carryll started her career in Vishay and worked in a Sales role for ten years leading the Greater China SMPS segment and later as the Head of the Taiwan Distribution team for two years.

In Infineon, Carryll had various roles as the application marketing head of Taiwan SMPS, Distribution Marketing Head for the mass market business in Greater China, and Product Marketing Manager of High Voltage MOSFETs during the last four years.


During her two decades in the Semiconductor industry, Carryll led the Sales teams to achieve outstanding business performance in Vishay and Infineon.

Vice President Ecosystems

Board of Directors

During her PhD in power devices at Cambridge University, Giorgia worked on international projects with top semiconductor companies, through which she learned about different cultures operating in this field and gained experience managing and budgeting multi-partner projects. Before that, Giorgia led the GaN power devices team at the Cambridge University engineering department.

Curious and knowledgeable, Giorgia leads an experienced team of passionate people working with enthusiasm and continuous drive to do things better. She never forgets why she founded CGD: to change how energy is used and protect the environment with efficient power electronics

Prof. Florin Udrea, CTO of Cambridge GaN devices (CGD), is recognised as a multi-talented individual in the field of semiconductors. Besides being a professor in semiconductor engineering at the University of Cambridge, he is also the head of the High Voltage Microelectronics and sensors group, founder of other semiconductor companies, passionate about driving strategy forward, a mastermind for innovations, and holds more than 200 international patents in power semiconductor devices and sensors. Florin has been a Fellow of the Royal Academy of Engineering in the UK since 2015. 

With his experience and technical know-how, Florin is helping turn CGD into an innovative company. Besides CGD, he has founded other successful semiconductor companies: Cambridge Semiconductor (Camsemi) in power ICs, sold to Power Integrations; Cambridge CMOS Sensors (CCS) in the field of smart sensors, sold to AMS; Cambridge Microelectronics in Power Devices; and Flusso Ltd. in flow and temperature sensors

In 2018, Florin was awarded the Pro-Vice-Chancellor Award from Cambridge University, the Nanosmat Medal, and the prestigious Mullard Award from The Royal Society

Florin never lets an opportunity pass by and will diligently pursue any new ideas. Although he knows and teaches theory, a moment of pride for him is when things come to life. With CGD and its products, he is painting the future in a brighter colour, and this is what Florin is leading by working with semiconductors

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Pete Hutton is an Angel investor, Advisor, and Chairman for several start-ups and scale-ups in Cambridge, Edinburgh, London, and Oxford. His previous full-time role was as President of product groups at Arm where he was responsible for all product development, marketing, and licensing. This covered 3,500 staff in > 25 global locations and worked closely with a range of international partners. In his three years in the role, revenue increased by around 50% (> $500m).

Before that, Pete held senior positions within other Arm divisions, ran corporate engineering for Wolfson, and was general manager for processors at ARC and a group director for Cadence.

Chair

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John has worked in equity investment for over 20 years with experience both on the advisory side as Head of Global Capital Goods equity research at Merrill Lynch and on the fund management side as a Partner at Adelphi Capital LLP.

John has a Double First in Engineering from St John’s College, Cambridge and an MBA with Distinction from INSEAD.

Director (Parkwalk Advisors)

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Dennis joined BGF in 2021, based out of London and focuses on investments across the ClimateTech and sustainability landscape. He has been active in venture capital for over 20 years as an investor across Europe, the US, and Asia for Softbank and DFJ ePlanet Capital.

Dennis has also consulted Pond Venture Partners in London and San Jose. Dennis has a physics background, beginning his career working on global information systems in the earlier days of the Internet before moving into venture capital and has been involved in almost 100 transactions since.

He holds a First Class Honours Bachelor of Science Degree in Physics from Exeter University and a Master of Business Administration from Harvard Business School.

Director (BGF)

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Ed co-founded IQ Capital in 2006 and has over 20 years of deep-tech venture capital experience. Originally an engineer, he founded his first venture capital firm in 1996, investing in the first wave of UK internet companies, and he has focused on early-stage technology investing ever since. Ed specialises in leveraging the subtle interactions between developing disruptive technology, discovering product-market fit, and optimising business strategy, recognising that the most successful businesses can seamlessly integrate these activities from the start. Ed works with Paragraf, Senseye, Speechmatics, TurinTech, Imandra, causaLens, and previously with Privitar as their first VC investor.

Ed is a regular contributor to Forbes, commenting on the broader effects of disruptive technologies and on how society could and should respond, and he has a passion for identifying the critical disruptive technologies of the future.

Director (IQ Capital)

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Ian was a Director at Unilever Ventures in London before joining CIC, where he led all B2B/Technology investments. Over 11 years he was responsible for numerous transactions across Europe and North America, including investments into Olapic (acquired by Monotype Inc), Mirakl, Aera Technology, Skupos, WeGift, Celtra, CreatorIQ, Mirriad (Listed on AIM) and Blis Global. Prior to Unilever Ventures, Ian worked at L.E.K. Consulting in London and Australia, working on strategy consulting and private equity due-diligence projects.


Ian has PhD in Physical Chemistry from the University of Cambridge and Msci in Chemistry from Bristol University.

Director (Cambridge Innovation Capital)

Strategic Advisory Board

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Alain is a 30-year semiconductor industry veteran. He received his PhD in 1989 from the Institut National des Sciences Appliquées (INSA) de Toulouse (France) for his work on optical lithography for microelectronics.

Throughout his international career, Alain was involved in most of the critical technology changes of the semiconductor industry, from subwavelength pattern printing to larger wafer (300mm) technology development to power efficiency and introduction of wide bandgap semiconductors.

His international career started driving optical lithography efforts at the Motorola Mesa site (AZ, USA) and later at the ST-Microelectronics factory in Carrollton (TX, USA). He later joined the Motorola-Siemens’ joint venture in Dresden, pioneering 300mm silicon manufacturing in Dresden, Germany, and was part of the team that produced the first 64Mbit DRAM on 300mm wafers in 1998. He then managed Fab5 and Fab3 engineering teams in Singapore at Silicon Foundry Chartered Semiconductor (today Global Foundries). 
In 2003, Alain joined the International Rectifier power device technology development team in Newport (Wales, UK) to head the silicon technology development team for all discrete power devices from the company headquarters in El Segundo, CA, USA. After Infineon acquired International Rectifier, Alain took worldwide responsibility for the Gallium Nitride technology development initiative.

In 2021, he founded his power semiconductors consulting company.

Business Advisor

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With over 28 years in senior leadership roles in the IT and Semiconductor industries, Deyoung has led regional marketing and sales strategy to success, fostering competency and creating sustainable and profitable business growth. 

Deyoung has a high level of business acumen. During his career at Infineon Technologies, he drove the revenue growth of the entire Power Multimarket Division in the Asia Pacific, leading a skilled sales and marketing and application team with over 200 people. 
As president of Infineon Taiwan, Deyoung led the team’s administration, programs, and strategic business plan.

Observers

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George is Director – Deeptech, Direct and Co-investments at [British Patient Capital](https://www.british-business-bank.co.uk/), now a sub-brand of the British Business Bank, where he invests in scale-up stage Deeptech companies. He has been investing in technology start-ups and scale-ups since 2011 and is the co-founder of three technology companies.

George has a Master’s degree in Mechanical Engineering from the University of Bristol, is a CFA charterholder and a Kauffman Foundation Global Scholar.


CGD65B200S2

650 V / 200 mOhm GaN HEMT with ICeGaN® Gate and Current Sense

ICeGaN® in DFN 5x6 SMD

Documents

Datasheet

CGD65B200S2

Product Brief

Product Brief for H1 Series_EN

Application Notes

CGD-AN2201-ICeGaN in LLC Application Note

CGD-AN2206-Current Sensing with ICeGaN Application Note

CGD-AN2207-ICeGaN HEMT PCB Layout Guide

CGD-AN2302-How to Use ICeGaN

Design Files

SPICE Model CGD65B200S2

CGD65B Recommended Footprint

CGD65B Altium Library

Quality File

CGD-H1 series EOL PCN