CGD Demonstrates the Novel Easy-to-use GaN Technology at GaN Marathon Workshop
A Prestigious Workshop on Gallium Nitride During June 20-22
GaN Marathon, organised by the Department of Information Engineering at University of Padova, is a reputable workshop focusing on advancements in gallium nitride (GaN) technology. CGD have joined the previous two editions in 2016 and 2018. This year as CGD released the first portfolio of 650 V GaN HEMTs, we will present the latest results on the ICeGaN™ technology that is used in the products. Co-Founder and CEO Giorgia Longobardi has an invited talk on the benefits that can be derived when ICeGaN™ is used in common applications. Kalparupa Mukherjee gives an oral reporting on the static and dynamic performance of the state-of-the-art 650V ICeGaN™ (Integrated Circuit Enhancement GaN) power switch with an on-state resistance Ron of 200 mΩ.
Characterization of the novel ICeGaN 650V/8.5 A, 200 mΩ power device technology
Presenter: Kalparupa Mukherjee
Time and date: 3:40 PM CEST, June 20
CGD monolithically integrated approach for power devices: The third way
Presenter: Giorgia Longobardi
Time and date: 8:30 AM CEST, June 21
